Характеристики
MJ11016G, Биполярный транзистор, NPN, составной The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
• High DC current gain
• Collector-base voltage (Vcbo = 120V)
• Emitter-base voltage (Vcbo = 5V)